Optimization procedures using effect of etalon finesse and driving term on optical bistability

Abstract EN

In this work, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb).

Because of a tradeoff between the etalon finesse values and driving terms, an optimization procedures have been done on the InSb etalon/CO laser parameters, such as critical switching irradiance (Ic) via simulation systems of optimization procedures of optical cavity.

In order to achieve the minimum switching power and faster switching time, the optimization parameters of the finesse values and driving terms on optical bistability and switching dynamics have been studied.

For different values of a cavity finesse (F=25 and 2.37) the switching intensity takes low values with a high finesse etalon compared to a high switching intensity with a low finesse etalon.

So, the minimum switching power for a low finesse etalon is about 0.785 mW, and is about 0.0785 mW for a high finesse etalon.

The driving term peak of a high finesse etalon becomes higher and the slowing down region becomes less, leading to a fast switching about 300 ns for low finesse etalon, and about 150 ns for a high finesse etalon.