The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure
Joint Authors
Boshta, M.
Bärner, K.
Braunstein, R.
Morchshakov, V.
Source
Advances in Materials Science and Engineering
Issue
Vol. 2008, Issue 2008 (31 Dec. 2008), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2008-02-03
Country of Publication
Egypt
No. of Pages
4
Abstract EN
The transient thermoelectric effects (TTEs) method is used to measure the ambipolar space charge built up in a low-pressure hot wire chemical vapor deposition (HWCVD) technique a-Si:H layer deposited on a glass substrate.
The stage 2 TTE-transients yield the trap state density difference with and without bending pressure up to 9 bars.
The a-Si:H sample shows a reduction of the negative storage peaks at 0.045 eV and 0.026 eV with increasing pressure, while the positive (hole trap) peak and the zero crossing practically do not change with the pressure.
At the maximum bending pressure, the negative peaks are almost zero and shifted into the band gap or toward the conduction band.
Our result shows that it is necessary to produce and mount hydrogenated thin film solar cell stress-free.
American Psychological Association (APA)
Boshta, M.& Morchshakov, V.& Bärner, K.& Braunstein, R.. 2008. The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure. Advances in Materials Science and Engineering،Vol. 2008, no. 2008, pp.1-4.
https://search.emarefa.net/detail/BIM-987709
Modern Language Association (MLA)
Boshta, M.…[et al.]. The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure. Advances in Materials Science and Engineering No. 2008 (2008), pp.1-4.
https://search.emarefa.net/detail/BIM-987709
American Medical Association (AMA)
Boshta, M.& Morchshakov, V.& Bärner, K.& Braunstein, R.. The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure. Advances in Materials Science and Engineering. 2008. Vol. 2008, no. 2008, pp.1-4.
https://search.emarefa.net/detail/BIM-987709
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-987709