The Effect of Mg Dopant and Oxygen Partial Pressure on Microstructure and Phase Transformation of ZnTiO3 Thin Films

Abstract EN

Mg-doped zinc titanate (ZnTiO3) films were prepared using RF magnetron sputtering.

Subsequent annealing of the as-deposited films was performed at a temperature ranging from 600 to 900∘C for 2 hours with a heating rate of 5∘C/min in air.

It was found that the as-deposited films were amorphous and contained 2.77 at.% magnesium.

This was further confirmed by the onset of crystallization that took place at annealing temperatures of 600∘C.

The results showed that single Zn2Ti3O8 phase was existed at 600∘C.

When annealing is at 700∘C, the results revealed that mainly a hexagonal ZnTiO3 phase accompanying a Zn2Ti3O8 minor phase was observed.

When annealing is at 900∘C, the results showed that single hexagonal ZnTiO3 phase is stable at 900∘C.

It means that ZnTiO3 phase containing no Mg is unstable at 900∘C and is decomposed from hexagonal ZnTiO3 to cubic Zn2TiO4 and rutile TiO2 at 900∘C.

In addition, the effect of oxygen partial pressure for the films deposited on the phase transformations and microstructures of zinc titanites thin film was investigated.