Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires

Abstract EN

Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst.

The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters.

A vapor-solid mechanism was proposed to explain the growth of the nanowires.

These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance.

The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature.

The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat.

These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency.

They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.