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Improving the RF Performance of Carbon Nanotube Field Effect Transistor
Author
Source
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-04-09
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET.
The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes.
We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tube and, thereby, improves high-frequency performance.
American Psychological Association (APA)
Hamieh, S.. 2012. Improving the RF Performance of Carbon Nanotube Field Effect Transistor. Journal of Nanomaterials،Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-998365
Modern Language Association (MLA)
Hamieh, S.. Improving the RF Performance of Carbon Nanotube Field Effect Transistor. Journal of Nanomaterials No. 2012 (2012), pp.1-7.
https://search.emarefa.net/detail/BIM-998365
American Medical Association (AMA)
Hamieh, S.. Improving the RF Performance of Carbon Nanotube Field Effect Transistor. Journal of Nanomaterials. 2012. Vol. 2012, no. 2012, pp.1-7.
https://search.emarefa.net/detail/BIM-998365
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-998365