3D quantum numerical simulation of horizontal rectangular dual metal (Aluminum, Titanium) gate \ gate all around MOSFETs
By: khaouani, M.; Guen, A.; Bu Azzah, B.…[et al.]. . International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria) Journal of New Technology and Materials. Vol. 4, no. 1 (May. 2014), pp.1-5, 5 p.
Subjects: Electronic circuits; Microelectronics; Integrated circuits