3D quantum numerical simulation of horizontal rectangular dual metal (Aluminum, Titanium) gate \ gate all around MOSFETs
Joint Authors
khaouani, M.
Guen, A.
Bu Azzah, B.
Kurdi, Z.
Bendermel, O.
Source
Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2014-05-31
Country of Publication
Algeria
No. of Pages
5
Main Subjects
Topics
English Abstract
The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10 nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET [1], In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools.
We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure and the S parameter (S11, S12, S21, S22), that having a direct impact on their threshold voltage and drain current.
In addition, our TFET showed reasonable Ion/Ioff ratio of (104) and low drain induced barrier lowering (DIBL) of 39mV / V.
Data Type
Conference Papers
Record ID
BIM-429625
American Psychological Association (APA)
khaouani, M.& Guen, A.& Bu Azzah, B.& Kurdi, Z.& Bendermel, O.. 2014-05-31. 3D quantum numerical simulation of horizontal rectangular dual metal (Aluminum, Titanium) gate \ gate all around MOSFETs. International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria). . Vol. 4, no. 1 (May. 2014), pp.1-5.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-429625
Modern Language Association (MLA)
khaouani, M.…[et al.]. 3D quantum numerical simulation of horizontal rectangular dual metal (Aluminum, Titanium) gate \ gate all around MOSFETs. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2014-05-31.
https://search.emarefa.net/detail/BIM-429625
American Medical Association (AMA)
khaouani, M.& Guen, A.& Bu Azzah, B.& Kurdi, Z.& Bendermel, O.. 3D quantum numerical simulation of horizontal rectangular dual metal (Aluminum, Titanium) gate \ gate all around MOSFETs. . International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-429625