Prepared and Characteristics of ZnO:YAGSilicon Nanostructure Diodes Prepared by Ultrasonic Spraying

الملخص EN

This work presents a novel white light source.

An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode.

A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate.

A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed.

The white broad band consists of the emissions of defect level transition of the ZnO film and the 5D4 level to the 7F6 and 7F5 level transitions of Ce3+ ions.