Prepared and Characteristics of ZnO:YAGSilicon Nanostructure Diodes Prepared by Ultrasonic Spraying
Joint Authors
Hsu, Chih-Hung
Wu, Jia-Ren
Chen, Lung-Chien
Source
International Journal of Photoenergy
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-05-26
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
This work presents a novel white light source.
An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode.
A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate.
A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed.
The white broad band consists of the emissions of defect level transition of the ZnO film and the 5D4 level to the 7F6 and 7F5 level transitions of Ce3+ ions.
American Psychological Association (APA)
Hsu, Chih-Hung& Chen, Lung-Chien& Wu, Jia-Ren. 2014. Prepared and Characteristics of ZnO:YAGSilicon Nanostructure Diodes Prepared by Ultrasonic Spraying. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1036776
Modern Language Association (MLA)
Hsu, Chih-Hung…[et al.]. Prepared and Characteristics of ZnO:YAGSilicon Nanostructure Diodes Prepared by Ultrasonic Spraying. International Journal of Photoenergy No. 2014 (2014), pp.1-6.
https://search.emarefa.net/detail/BIM-1036776
American Medical Association (AMA)
Hsu, Chih-Hung& Chen, Lung-Chien& Wu, Jia-Ren. Prepared and Characteristics of ZnO:YAGSilicon Nanostructure Diodes Prepared by Ultrasonic Spraying. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1036776
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1036776
