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Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide
المؤلفون المشاركون
Ge, Jia
Tang, Muzhi
Wong, Johnson
Zhang, Zhenhao
Dippell, Torsten
Doerr, Manfred
Hohn, Oliver
Huber, Marco
Wohlfart, Peter
Mueller, Thomas
Aberle, Armin Gerhard
المصدر
International Journal of Photoenergy
العدد
المجلد 2014، العدد 2014 (31 ديسمبر/كانون الأول 2014)، ص ص. 1-12، 12ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2014-06-01
دولة النشر
مصر
عدد الصفحات
12
التخصصات الرئيسية
الملخص EN
We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper.
The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform.
Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved.
It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation.
The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well.
The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc) of 741 mV.
A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality.
The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Ge, Jia& Tang, Muzhi& Wong, Johnson& Zhang, Zhenhao& Dippell, Torsten& Doerr, Manfred…[et al.]. 2014. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-12.
https://search.emarefa.net/detail/BIM-1037308
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Ge, Jia…[et al.]. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide. International Journal of Photoenergy No. 2014 (2014), pp.1-12.
https://search.emarefa.net/detail/BIM-1037308
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Ge, Jia& Tang, Muzhi& Wong, Johnson& Zhang, Zhenhao& Dippell, Torsten& Doerr, Manfred…[et al.]. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-12.
https://search.emarefa.net/detail/BIM-1037308
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1037308
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
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تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر
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