Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide
Joint Authors
Ge, Jia
Tang, Muzhi
Wong, Johnson
Zhang, Zhenhao
Dippell, Torsten
Doerr, Manfred
Hohn, Oliver
Huber, Marco
Wohlfart, Peter
Mueller, Thomas
Aberle, Armin Gerhard
Source
International Journal of Photoenergy
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-12, 12 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-06-01
Country of Publication
Egypt
No. of Pages
12
Main Subjects
Abstract EN
We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper.
The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform.
Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved.
It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation.
The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well.
The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc) of 741 mV.
A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality.
The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.
American Psychological Association (APA)
Ge, Jia& Tang, Muzhi& Wong, Johnson& Zhang, Zhenhao& Dippell, Torsten& Doerr, Manfred…[et al.]. 2014. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-12.
https://search.emarefa.net/detail/BIM-1037308
Modern Language Association (MLA)
Ge, Jia…[et al.]. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide. International Journal of Photoenergy No. 2014 (2014), pp.1-12.
https://search.emarefa.net/detail/BIM-1037308
American Medical Association (AMA)
Ge, Jia& Tang, Muzhi& Wong, Johnson& Zhang, Zhenhao& Dippell, Torsten& Doerr, Manfred…[et al.]. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-12.
https://search.emarefa.net/detail/BIM-1037308
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1037308