Diamond Based Field-Effect Transistors of Zr Gate with SiNx Dielectric Layers

الملخص EN

Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out.

SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2 and 24.4 cm2·V−1·s−1, respectively.

The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N.

High voltage up to −200 V is applied to the device, and no breakdown is observed.

For comparison, another traditional surface channel FET (SC-FET) is also fabricated.