Diamond Based Field-Effect Transistors of Zr Gate with SiNx Dielectric Layers
Joint Authors
Wang, W.
Hu, C.
Li, S. Y.
Li, F. N.
Liu, Z. C.
Wang, F.
Fu, J.
Wang, H. X.
Source
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-10-25
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out.
SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2 and 24.4 cm2·V−1·s−1, respectively.
The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N.
High voltage up to −200 V is applied to the device, and no breakdown is observed.
For comparison, another traditional surface channel FET (SC-FET) is also fabricated.
American Psychological Association (APA)
Wang, W.& Hu, C.& Li, S. Y.& Li, F. N.& Liu, Z. C.& Wang, F.…[et al.]. 2015. Diamond Based Field-Effect Transistors of Zr Gate with SiNx Dielectric Layers. Journal of Nanomaterials،Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1068736
Modern Language Association (MLA)
Wang, W.…[et al.]. Diamond Based Field-Effect Transistors of Zr Gate with SiNx Dielectric Layers. Journal of Nanomaterials No. 2015 (2015), pp.1-5.
https://search.emarefa.net/detail/BIM-1068736
American Medical Association (AMA)
Wang, W.& Hu, C.& Li, S. Y.& Li, F. N.& Liu, Z. C.& Wang, F.…[et al.]. Diamond Based Field-Effect Transistors of Zr Gate with SiNx Dielectric Layers. Journal of Nanomaterials. 2015. Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1068736
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1068736
