Anomaly Detection and Degradation Prediction of MOSFET

المؤلفون المشاركون

Guan, Yong
Wu, Lifeng
Ma, Jie
Li, Xiao-Juan

المصدر

Mathematical Problems in Engineering

العدد

المجلد 2015، العدد 2015 (31 ديسمبر/كانون الأول 2015)، ص ص. 1-5، 5ص.

الناشر

Hindawi Publishing Corporation

تاريخ النشر

2015-06-08

دولة النشر

مصر

عدد الصفحات

5

التخصصات الرئيسية

هندسة مدنية

الملخص EN

The MOSFET is an important power electronic transistor widely used in electrical systems.

Its reliability has an effect on the performance of systems.

In this paper, the failure models and mechanisms of MOSFETs are briefly analyzed.

The on-resistance Ron is the key failure precursor parameter representing the degree of degradation.

Based on the experimental data, a nonlinear dual-exponential degradation model for MOSFETs is obtained.

Then, we present an approach for MOSFET degradation state prediction using a strong tract filter based on the obtained degradation model.

Lastly, the proposed algorithm is shown to perform effectively on experimental data.

Thus, it can provide early warning and enhance the reliability of electrical systems.

نمط استشهاد جمعية علماء النفس الأمريكية (APA)

Wu, Lifeng& Guan, Yong& Li, Xiao-Juan& Ma, Jie. 2015. Anomaly Detection and Degradation Prediction of MOSFET. Mathematical Problems in Engineering،Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1074175

نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)

Wu, Lifeng…[et al.]. Anomaly Detection and Degradation Prediction of MOSFET. Mathematical Problems in Engineering No. 2015 (2015), pp.1-5.
https://search.emarefa.net/detail/BIM-1074175

نمط استشهاد الجمعية الطبية الأمريكية (AMA)

Wu, Lifeng& Guan, Yong& Li, Xiao-Juan& Ma, Jie. Anomaly Detection and Degradation Prediction of MOSFET. Mathematical Problems in Engineering. 2015. Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1074175

نوع البيانات

مقالات

لغة النص

الإنجليزية

الملاحظات

Includes bibliographical references

رقم السجل

BIM-1074175