Anomaly Detection and Degradation Prediction of MOSFET
Joint Authors
Guan, Yong
Wu, Lifeng
Ma, Jie
Li, Xiao-Juan
Source
Mathematical Problems in Engineering
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-06-08
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
The MOSFET is an important power electronic transistor widely used in electrical systems.
Its reliability has an effect on the performance of systems.
In this paper, the failure models and mechanisms of MOSFETs are briefly analyzed.
The on-resistance Ron is the key failure precursor parameter representing the degree of degradation.
Based on the experimental data, a nonlinear dual-exponential degradation model for MOSFETs is obtained.
Then, we present an approach for MOSFET degradation state prediction using a strong tract filter based on the obtained degradation model.
Lastly, the proposed algorithm is shown to perform effectively on experimental data.
Thus, it can provide early warning and enhance the reliability of electrical systems.
American Psychological Association (APA)
Wu, Lifeng& Guan, Yong& Li, Xiao-Juan& Ma, Jie. 2015. Anomaly Detection and Degradation Prediction of MOSFET. Mathematical Problems in Engineering،Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1074175
Modern Language Association (MLA)
Wu, Lifeng…[et al.]. Anomaly Detection and Degradation Prediction of MOSFET. Mathematical Problems in Engineering No. 2015 (2015), pp.1-5.
https://search.emarefa.net/detail/BIM-1074175
American Medical Association (AMA)
Wu, Lifeng& Guan, Yong& Li, Xiao-Juan& Ma, Jie. Anomaly Detection and Degradation Prediction of MOSFET. Mathematical Problems in Engineering. 2015. Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1074175
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1074175