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Analysis and simulation of mosfet differential amplifier
العناوين الأخرى
تحليل و محاكاة المضخم التفاضلي الذي يستخدم التزانزستور المجالي نوع معدن-اوكسيد- شبه موصل
المؤلف
المصدر
Journal of Engineering and Sustainable Development
العدد
المجلد 23، العدد 6 (30 نوفمبر/تشرين الثاني 2019)، ص ص. 1-10، 10ص.
الناشر
الجامعة المستنصرية كلية الهندسة
تاريخ النشر
2019-11-30
دولة النشر
العراق
عدد الصفحات
10
التخصصات الرئيسية
العلوم الاجتماعية (متداخلة التخصصات)
الملخص EN
With the evolution of electronics today, a MOSFET transistor is useful in many applications such as computers due to several advantages.
In this research, an NMOS transistor differential amplifier circuit with passive load that uses a modified Wilson current mirror as a biasing circuit is analyzed, designed and implemented.
The width-to-length ratios of transistors are calculated by considering the voltage and current values at the output of the biasing circuit, and parameters such as conduction parameter, base width modulation parameter, and threshold voltage.
A MATLAB version 8.1.0.604(R2010a) programming tool is employed for calculations and the simulations are carried out via Multisim 9 software tool.
The output resistance obtained for current mirror is 2.297 "MΩ".
CMRR, output resistance, and power dissipation for differential amplifier circuit are 33.351 "dB", 61.274 "kΩ" and 6.66 "mW", respectively.
The results show that the width-to-length ratio, differential gain and common mode rejection ratio are decreased with decreasing applied voltage at the output of the biasing circuit while approximately same values obtained for output resistance and common mode gain.
The results show a good agreement between the measured values from simulation and the calculated one from With the evolution of electronics today, a MOSFET transistor is useful in many applications such as computers due to several advantages.
In this research, an NMOS transistor differential amplifier circuit with passive load that uses a modified Wilson current mirror as a biasing circuit is analyzed, designed and implemented.
The width-to-length ratios of transistors are calculated by considering the voltage and current values at the output of the biasing circuit, and parameters such as conduction parameter, base width modulation parameter, and threshold voltage.
A MATLAB version 8.1.0.604(R2010a) programming tool is employed for calculations and the simulations are carried out via Multisim 9 software tool.
The output resistance obtained for current mirror is 2.297 "MΩ".
CMRR, output resistance, and power dissipation for differential amplifier circuit are 33.351 "dB", 61.274 "kΩ" and 6.66 "mW", respectively.
The results show that the width-to-length ratio, differential gain and common mode rejection ratio are decreased with decreasing applied voltage at the output of the biasing circuit while approximately same values obtained for output resistance and common mode gain.
The results show a good agreement between the measured values from simulation and the calculated one from design.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Hashim, Munir Abbud. 2019. Analysis and simulation of mosfet differential amplifier. Journal of Engineering and Sustainable Development،Vol. 23, no. 6, pp.1-10.
https://search.emarefa.net/detail/BIM-1114095
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Hashim, Munir Abbud. Analysis and simulation of mosfet differential amplifier. Journal of Engineering and Sustainable Development Vol. 23, no. 6 (Nov. 2019), pp.1-10.
https://search.emarefa.net/detail/BIM-1114095
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Hashim, Munir Abbud. Analysis and simulation of mosfet differential amplifier. Journal of Engineering and Sustainable Development. 2019. Vol. 23, no. 6, pp.1-10.
https://search.emarefa.net/detail/BIM-1114095
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
-
رقم السجل
BIM-1114095
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
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