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Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing
المؤلفون المشاركون
Curiel Alvarez, Mario
Nedev, Nicola
Arias, Abraham
Ghose, Susmita
Rojas-Ramirez, Juan Salvador
Mateos, David
Pérez, Oscar
Suárez, Mariel
Droopad, Ravi
Valdez Salas, Benjamin
المصدر
Advances in Materials Science and Engineering
العدد
المجلد 2018، العدد 2018 (31 ديسمبر/كانون الأول 2018)، ص ص. 1-6، 6ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2018-03-18
دولة النشر
مصر
عدد الصفحات
6
الملخص EN
β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy.
The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source.
Reflection high-energy electron diffraction (RHEED) was used to monitor the surface quality in real time.
Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire.
Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves.
UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm.
Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination.
The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Arias, Abraham& Nedev, Nicola& Ghose, Susmita& Rojas-Ramirez, Juan Salvador& Mateos, David& Curiel Alvarez, Mario…[et al.]. 2018. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing. Advances in Materials Science and Engineering،Vol. 2018, no. 2018, pp.1-6.
https://search.emarefa.net/detail/BIM-1122423
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Arias, Abraham…[et al.]. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing. Advances in Materials Science and Engineering No. 2018 (2018), pp.1-6.
https://search.emarefa.net/detail/BIM-1122423
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Arias, Abraham& Nedev, Nicola& Ghose, Susmita& Rojas-Ramirez, Juan Salvador& Mateos, David& Curiel Alvarez, Mario…[et al.]. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing. Advances in Materials Science and Engineering. 2018. Vol. 2018, no. 2018, pp.1-6.
https://search.emarefa.net/detail/BIM-1122423
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1122423
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
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