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Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing
Joint Authors
Curiel Alvarez, Mario
Nedev, Nicola
Arias, Abraham
Ghose, Susmita
Rojas-Ramirez, Juan Salvador
Mateos, David
Pérez, Oscar
Suárez, Mariel
Droopad, Ravi
Valdez Salas, Benjamin
Source
Advances in Materials Science and Engineering
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-03-18
Country of Publication
Egypt
No. of Pages
6
Abstract EN
β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy.
The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source.
Reflection high-energy electron diffraction (RHEED) was used to monitor the surface quality in real time.
Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire.
Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves.
UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm.
Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination.
The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.
American Psychological Association (APA)
Arias, Abraham& Nedev, Nicola& Ghose, Susmita& Rojas-Ramirez, Juan Salvador& Mateos, David& Curiel Alvarez, Mario…[et al.]. 2018. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing. Advances in Materials Science and Engineering،Vol. 2018, no. 2018, pp.1-6.
https://search.emarefa.net/detail/BIM-1122423
Modern Language Association (MLA)
Arias, Abraham…[et al.]. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing. Advances in Materials Science and Engineering No. 2018 (2018), pp.1-6.
https://search.emarefa.net/detail/BIM-1122423
American Medical Association (AMA)
Arias, Abraham& Nedev, Nicola& Ghose, Susmita& Rojas-Ramirez, Juan Salvador& Mateos, David& Curiel Alvarez, Mario…[et al.]. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing. Advances in Materials Science and Engineering. 2018. Vol. 2018, no. 2018, pp.1-6.
https://search.emarefa.net/detail/BIM-1122423
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1122423