Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal

المؤلفون المشاركون

dos Santos, Robinson Alves
de Mesquita, Carlos Henrique
da Silva, Júlio Batista Rodrigues
Ferraz, Caue de Melo
da Costa, Fabio Eduardo
Martins, João Francisco Trencher
Gennari, Roseli Fernandes
Hamada, Margarida Mizue

المصدر

Advances in Materials Science and Engineering

العدد

المجلد 2017، العدد 2017 (31 ديسمبر/كانون الأول 2017)، ص ص. 1-10، 10ص.

الناشر

Hindawi Publishing Corporation

تاريخ النشر

2017-01-18

دولة النشر

مصر

عدد الصفحات

10

الملخص EN

Two commercially available TlBr salts were used as the raw material for crystal growths to be used as radiation detectors.

Previously, TlBr salts were purified once, twice, and three times by the repeated Bridgman method.

The purification efficiency was evaluated by inductively coupled plasma mass spectroscopy (ICP-MS), after each purification process.

A compartmental model was proposed to fit the impurity concentration as a function of the repetition number of the Bridgman growths, as well as determine the segregation coefficients of impurities in the crystals.

The crystalline structure, the stoichiometry, and the surface morphology of the crystals were evaluated, systematically, for the crystals grown with different purification numbers.

To evaluate the crystal as a radiation semiconductor detector, measurements of its resistivity and gamma-ray spectroscopy were carried out, using 241Am and 133Ba sources.

A significant improvement of the radiation response was observed in function of the crystal purity.

نمط استشهاد جمعية علماء النفس الأمريكية (APA)

dos Santos, Robinson Alves& de Mesquita, Carlos Henrique& da Silva, Júlio Batista Rodrigues& Ferraz, Caue de Melo& da Costa, Fabio Eduardo& Martins, João Francisco Trencher…[et al.]. 2017. Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal. Advances in Materials Science and Engineering،Vol. 2017, no. 2017, pp.1-10.
https://search.emarefa.net/detail/BIM-1123596

نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)

dos Santos, Robinson Alves…[et al.]. Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal. Advances in Materials Science and Engineering No. 2017 (2017), pp.1-10.
https://search.emarefa.net/detail/BIM-1123596

نمط استشهاد الجمعية الطبية الأمريكية (AMA)

dos Santos, Robinson Alves& de Mesquita, Carlos Henrique& da Silva, Júlio Batista Rodrigues& Ferraz, Caue de Melo& da Costa, Fabio Eduardo& Martins, João Francisco Trencher…[et al.]. Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal. Advances in Materials Science and Engineering. 2017. Vol. 2017, no. 2017, pp.1-10.
https://search.emarefa.net/detail/BIM-1123596

نوع البيانات

مقالات

لغة النص

الإنجليزية

الملاحظات

Includes bibliographical references

رقم السجل

BIM-1123596