Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal
Joint Authors
dos Santos, Robinson Alves
de Mesquita, Carlos Henrique
da Silva, Júlio Batista Rodrigues
Ferraz, Caue de Melo
da Costa, Fabio Eduardo
Martins, João Francisco Trencher
Gennari, Roseli Fernandes
Hamada, Margarida Mizue
Source
Advances in Materials Science and Engineering
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-01-18
Country of Publication
Egypt
No. of Pages
10
Abstract EN
Two commercially available TlBr salts were used as the raw material for crystal growths to be used as radiation detectors.
Previously, TlBr salts were purified once, twice, and three times by the repeated Bridgman method.
The purification efficiency was evaluated by inductively coupled plasma mass spectroscopy (ICP-MS), after each purification process.
A compartmental model was proposed to fit the impurity concentration as a function of the repetition number of the Bridgman growths, as well as determine the segregation coefficients of impurities in the crystals.
The crystalline structure, the stoichiometry, and the surface morphology of the crystals were evaluated, systematically, for the crystals grown with different purification numbers.
To evaluate the crystal as a radiation semiconductor detector, measurements of its resistivity and gamma-ray spectroscopy were carried out, using 241Am and 133Ba sources.
A significant improvement of the radiation response was observed in function of the crystal purity.
American Psychological Association (APA)
dos Santos, Robinson Alves& de Mesquita, Carlos Henrique& da Silva, Júlio Batista Rodrigues& Ferraz, Caue de Melo& da Costa, Fabio Eduardo& Martins, João Francisco Trencher…[et al.]. 2017. Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal. Advances in Materials Science and Engineering،Vol. 2017, no. 2017, pp.1-10.
https://search.emarefa.net/detail/BIM-1123596
Modern Language Association (MLA)
dos Santos, Robinson Alves…[et al.]. Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal. Advances in Materials Science and Engineering No. 2017 (2017), pp.1-10.
https://search.emarefa.net/detail/BIM-1123596
American Medical Association (AMA)
dos Santos, Robinson Alves& de Mesquita, Carlos Henrique& da Silva, Júlio Batista Rodrigues& Ferraz, Caue de Melo& da Costa, Fabio Eduardo& Martins, João Francisco Trencher…[et al.]. Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal. Advances in Materials Science and Engineering. 2017. Vol. 2017, no. 2017, pp.1-10.
https://search.emarefa.net/detail/BIM-1123596
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1123596
