Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric
المؤلفون المشاركون
Oh, Seyoung
Lee, Seung Won
Kim, Dongjun
Choi, Jeong-Hun
Chae, Hong-Chul
Choi, Sung Mook
Ahn, Ji-Hoon
Cho, Byungjin
المصدر
العدد
المجلد 2018، العدد 2018 (31 ديسمبر/كانون الأول 2018)، ص ص. 1-7، 7ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2018-10-08
دولة النشر
مصر
عدد الصفحات
7
التخصصات الرئيسية
الملخص EN
In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric.
CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared.
There was no considerable hysteresis in the Al2O3-based CNT FET device.
The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V).
Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties.
The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible.
Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test.
The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Oh, Seyoung& Lee, Seung Won& Kim, Dongjun& Choi, Jeong-Hun& Chae, Hong-Chul& Choi, Sung Mook…[et al.]. 2018. Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric. Journal of Nanomaterials،Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1193869
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Oh, Seyoung…[et al.]. Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric. Journal of Nanomaterials No. 2018 (2018), pp.1-7.
https://search.emarefa.net/detail/BIM-1193869
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Oh, Seyoung& Lee, Seung Won& Kim, Dongjun& Choi, Jeong-Hun& Chae, Hong-Chul& Choi, Sung Mook…[et al.]. Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric. Journal of Nanomaterials. 2018. Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1193869
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1193869
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر