Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric
Joint Authors
Oh, Seyoung
Lee, Seung Won
Kim, Dongjun
Choi, Jeong-Hun
Chae, Hong-Chul
Choi, Sung Mook
Ahn, Ji-Hoon
Cho, Byungjin
Source
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-10-08
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric.
CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared.
There was no considerable hysteresis in the Al2O3-based CNT FET device.
The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V).
Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties.
The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible.
Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test.
The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets.
American Psychological Association (APA)
Oh, Seyoung& Lee, Seung Won& Kim, Dongjun& Choi, Jeong-Hun& Chae, Hong-Chul& Choi, Sung Mook…[et al.]. 2018. Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric. Journal of Nanomaterials،Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1193869
Modern Language Association (MLA)
Oh, Seyoung…[et al.]. Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric. Journal of Nanomaterials No. 2018 (2018), pp.1-7.
https://search.emarefa.net/detail/BIM-1193869
American Medical Association (AMA)
Oh, Seyoung& Lee, Seung Won& Kim, Dongjun& Choi, Jeong-Hun& Chae, Hong-Chul& Choi, Sung Mook…[et al.]. Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric. Journal of Nanomaterials. 2018. Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1193869
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1193869