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High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method
المؤلفون المشاركون
Fong, Hon Hang
Xie, Yingtao
Wang, Dongping
المصدر
العدد
المجلد 2018، العدد 2018 (31 ديسمبر/كانون الأول 2018)، ص ص. 1-7، 7ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2018-05-06
دولة النشر
مصر
عدد الصفحات
7
التخصصات الرئيسية
الملخص EN
A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD) method.
The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O2)3], zinc acetylacetonate hydrate [Zn(C5H7O2)2·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O2)3] dissolved in tetrahydrofuran (THF).
The deposited films by spin-coating were annealed at moderate process temperature (≤500°C).
The relationship between device performance and postannealing temperature was studied.
The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased.
Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration.
In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition.
The result demonstrated that the saturated mobilities (μe) decreased and VTH shifted to positive voltage as the Ga molar ratio was increased.
It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing VTH.
As a result, the optimized performance of IGZO TFT with the mobility of 3.4 cm2V−1s−1 showed the MOD process was a promising approach.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Xie, Yingtao& Wang, Dongping& Fong, Hon Hang. 2018. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method. Journal of Nanomaterials،Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1194785
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Xie, Yingtao…[et al.]. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method. Journal of Nanomaterials No. 2018 (2018), pp.1-7.
https://search.emarefa.net/detail/BIM-1194785
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Xie, Yingtao& Wang, Dongping& Fong, Hon Hang. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method. Journal of Nanomaterials. 2018. Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1194785
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-1194785
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