High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method
Joint Authors
Fong, Hon Hang
Xie, Yingtao
Wang, Dongping
Source
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-05-06
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD) method.
The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O2)3], zinc acetylacetonate hydrate [Zn(C5H7O2)2·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O2)3] dissolved in tetrahydrofuran (THF).
The deposited films by spin-coating were annealed at moderate process temperature (≤500°C).
The relationship between device performance and postannealing temperature was studied.
The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased.
Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration.
In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition.
The result demonstrated that the saturated mobilities (μe) decreased and VTH shifted to positive voltage as the Ga molar ratio was increased.
It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing VTH.
As a result, the optimized performance of IGZO TFT with the mobility of 3.4 cm2V−1s−1 showed the MOD process was a promising approach.
American Psychological Association (APA)
Xie, Yingtao& Wang, Dongping& Fong, Hon Hang. 2018. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method. Journal of Nanomaterials،Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1194785
Modern Language Association (MLA)
Xie, Yingtao…[et al.]. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method. Journal of Nanomaterials No. 2018 (2018), pp.1-7.
https://search.emarefa.net/detail/BIM-1194785
American Medical Association (AMA)
Xie, Yingtao& Wang, Dongping& Fong, Hon Hang. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method. Journal of Nanomaterials. 2018. Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1194785
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1194785