Investigation and simulation of doublegate double-channel in0.17Al0.83NGaN HEMT

الملخص EN

In this paper a double-gate double-channel In0.17Al0.83N/GaN high-electron mobility transistors (HEMT) is proposed.

This proposed structure compared with single-gate single-channel In0.17Al0.83N/GaN HEMT, and also this single gate structure is compared with Al0.3Ga0.7N/GaN HEMT.

Simulation results confirm that proposed structure has higher drain current and transconductance.