Investigation and simulation of doublegate double-channel in0.17Al0.83NGaN HEMT
Joint Authors
Makki, Huda Yahya
Khattar, Nawal Murad
Source
Journal of the Iraqia University
Issue
Vol. 29, Issue 52، ج. 3 (30 Nov. 2021), pp.476-482, 7 p.
Publisher
al-Iraqia University Islamic Researches and Studies Center
Publication Date
2021-11-30
Country of Publication
Iraq
No. of Pages
7
Main Subjects
Information Technology and Computer Science
Abstract EN
In this paper a double-gate double-channel In0.17Al0.83N/GaN high-electron mobility transistors (HEMT) is proposed.
This proposed structure compared with single-gate single-channel In0.17Al0.83N/GaN HEMT, and also this single gate structure is compared with Al0.3Ga0.7N/GaN HEMT.
Simulation results confirm that proposed structure has higher drain current and transconductance.
American Psychological Association (APA)
Makki, Huda Yahya& Khattar, Nawal Murad. 2021. Investigation and simulation of doublegate double-channel in0.17Al0.83NGaN HEMT. Journal of the Iraqia University،Vol. 29, no. 52، ج. 3, pp.476-482.
https://search.emarefa.net/detail/BIM-1471534
Modern Language Association (MLA)
Makki, Huda Yahya& Khattar, Nawal Murad. Investigation and simulation of doublegate double-channel in0.17Al0.83NGaN HEMT. Journal of the Iraqia University Vol. 29, no. 52, p. 3 (Nov. 2021), pp.476-482.
https://search.emarefa.net/detail/BIM-1471534
American Medical Association (AMA)
Makki, Huda Yahya& Khattar, Nawal Murad. Investigation and simulation of doublegate double-channel in0.17Al0.83NGaN HEMT. Journal of the Iraqia University. 2021. Vol. 29, no. 52، ج. 3, pp.476-482.
https://search.emarefa.net/detail/BIM-1471534
Data Type
Journal Articles
Language
English
Notes
Record ID
BIM-1471534
