Design and simulation og high frequency low noisw amplifier

مقدم أطروحة جامعية

Wadi, Adi Isam

الجامعة

الجامعة التكنولوجية

الكلية

-

القسم الأكاديمي

قسم الهندسة الكهربائية

دولة الجامعة

العراق

الدرجة العلمية

ماجستير

تاريخ الدرجة العلمية

2004

الملخص الإنجليزي

This thesis is concerned with design and simulation of Low Noise Amplifier for mobile communication.

The minimization of noise figure and the miniature of required chip area for fabrication are the most important parameters to be investigated an optimization technique is applied to obtain the optimum structure parameter design values and to idea m i n i m u m noise factor.

A further modified new structure is developed to miniature the chip area required for the fabrication of the amp 1.

Electronic workbench (EWB) is used to simulate the designed, structures and results shows a good agreement with that specified.

Noise analysis using (EWB) result a minimum noise figure of a value (0.0106 db), minimum resultant chip area required has a value of (46 jam) and the value of gain is (190 dB) for inductive source degeneration and for the common gate design the noise figure equal (0.25 dB), minimum resultant chip area required has a value of (125 jam2) and the value of gain is (126 dB).

التخصصات الرئيسية

هندسة الاتصالات

الموضوعات

• أساليب المحاكاة
• المضخمات

• APA
• MLA
• AMA

لغة النص

الإنجليزية

نوع البيانات

رسائل جامعية

رقم السجل

BIM-305588