Evidence of AIxSiyOz formation during preparation of aluminum oxide film on the silicon substrate using glass assisted CO2 laser method

العناوين الأخرى

أدلة على تكوين الأغشية الرقيقة من سليكات الألومنيوم خلال ترسيب أوكسيد الألومنيوم باستخدام CO2 الليزر بمساعدة زجاج

مقدم أطروحة جامعية

Said, Iman Abd al-Majid

مشرف أطروحة جامعية

Hasan, Yusuf Mawlud

أعضاء اللجنة

Muhammad, Abd al-Qadir J.
Jamil, Nawfal Yusuf
Ahmad, Abd Allah F.

الجامعة

جامعة صلاح الدين

الكلية

كلية العلوم

القسم الأكاديمي

قسم الفيزياء

دولة الجامعة

العراق

الدرجة العلمية

ماجستير

تاريخ الدرجة العلمية

2012

الملخص الإنجليزي

The purpose of this work is preparation of localized aluminum oxide (Al2O3) films on the p-type Si <100> substrate using glass assisted CO2 laser technique.

Aluminum trichloride hexahedron AlCl3 6H2O and O2 were used as aluminum and oxygen source respectively, and Ar gas was used as a carrier gas for AlCl3.

The films were deposited at different Si- substrate temperatures, and different O2 gas flow rates.

The effect of thermal annealing on the low substrate temperature deposited film was carried out in argon environment.

It was found that the films /substrates interfaces not free from (Alx Siy Oz).

The chemically compositions of the deposited films were analyses by using Fourier transformation infrared spectroscopy (FTIR) and Energy Dispersive X-ray spectroscopy (EDX).

FTIR analysis spectrum showed characteristic bands of aluminum silicate corresponding to bending and stretching bonds of aluminum oxide in the range (650-750) cm-1,(750-850)cm-1 respectively, (1150-1105) cm-1 for silicon oxide bonds and (900-1000cm-1) for Si-O-Al bonds.

EDX has been performed in a scanning electron microscopy to characterize the composition in the central part of deposited region and revealed the presence of Al in the film.

The electrical properties of MOS structure were studied, by using C-V and J-V characteristics.

The C-V curves indicate a negative charge and interface trap density between film and substrate to be in the region (1012 -1013 eV-1cm-2).

The J-V curves show the leakage current and suggest Poole-Frenkle and Shcottcky emission mechanisms for carrier transport through the device.

The purpose of this work is preparation of localized aluminum oxide (Al2O3) films on the p-type Si <100> substrate using glass assisted CO2 laser technique.

Aluminum trichloride hexahedron AlCl3 6H2O and O2 were used as aluminum and oxygen source respectively, and Ar gas was used as a carrier gas for AlCl3.

The films were deposited at different Si- substrate temperatures, and different O2 gas flow rates.

The effect of thermal annealing on the low substrate temperature deposited film was carried out in argon environment.

It was found that the films /substrates interfaces not free from (Alx Siy Oz).

The chemically compositions of the deposited films were analyses by using Fourier transformation infrared spectroscopy (FTIR) and Energy Dispersive X-ray spectroscopy (EDX).

FTIR analysis spectrum showed characteristic bands of aluminum silicate corresponding to bending and stretching bonds of aluminum oxide in the range (650-750) cm-1,(750-850)cm-1 respectively, (1150-1105) cm-1 for silicon oxide bonds and (900-1000cm-1) for Si-O-Al bonds.

EDX has been performed in a scanning electron microscopy to characterize the composition in the central part of deposited region and revealed the presence of Al in the film.

The electrical properties of MOS structure were studied, by using C-V and J-V characteristics.

The C-V curves indicate a negative charge and interface trap density between film and substrate to be in the region (1012 -1013 eV-1cm-2).

The J-V curves show the leakage current and suggest Poole-Frenkle and Shcottcky emission mechanisms for carrier transport through the device.

التخصصات الرئيسية

الفيزياء

الموضوعات

• الخواص الضوئية
• الأكاسيد
• السيليكون
• أكسيد الألومنيوم

عدد الصفحات

70

قائمة المحتويات

• APA
• MLA
• AMA

لغة النص

الإنجليزية

نوع البيانات

رسائل جامعية

رقم السجل

BIM-314401