Evidence of AIxSiyOz formation during preparation of aluminum oxide film on the silicon substrate using glass assisted CO2 laser method
Other Title(s)
أدلة على تكوين الأغشية الرقيقة من سليكات الألومنيوم خلال ترسيب أوكسيد الألومنيوم باستخدام CO2 الليزر بمساعدة زجاج
Dissertant
Thesis advisor
Comitee Members
Muhammad, Abd al-Qadir J.
Jamil, Nawfal Yusuf
Ahmad, Abd Allah F.
University
Salahaddin University-Hawler
Faculty
College of Science
Department
Physics Department
University Country
Iraq
Degree
Master
Degree Date
2012
English Abstract
The purpose of this work is preparation of localized aluminum oxide (Al2O3) films on the p-type Si <100> substrate using glass assisted CO2 laser technique.
Aluminum trichloride hexahedron AlCl3 6H2O and O2 were used as aluminum and oxygen source respectively, and Ar gas was used as a carrier gas for AlCl3.
The films were deposited at different Si- substrate temperatures, and different O2 gas flow rates.
The effect of thermal annealing on the low substrate temperature deposited film was carried out in argon environment.
It was found that the films /substrates interfaces not free from (Alx Siy Oz).
The chemically compositions of the deposited films were analyses by using Fourier transformation infrared spectroscopy (FTIR) and Energy Dispersive X-ray spectroscopy (EDX).
FTIR analysis spectrum showed characteristic bands of aluminum silicate corresponding to bending and stretching bonds of aluminum oxide in the range (650-750) cm-1,(750-850)cm-1 respectively, (1150-1105) cm-1 for silicon oxide bonds and (900-1000cm-1) for Si-O-Al bonds.
EDX has been performed in a scanning electron microscopy to characterize the composition in the central part of deposited region and revealed the presence of Al in the film.
The electrical properties of MOS structure were studied, by using C-V and J-V characteristics.
The C-V curves indicate a negative charge and interface trap density between film and substrate to be in the region (1012 -1013 eV-1cm-2).
The J-V curves show the leakage current and suggest Poole-Frenkle and Shcottcky emission mechanisms for carrier transport through the device.
The purpose of this work is preparation of localized aluminum oxide (Al2O3) films on the p-type Si <100> substrate using glass assisted CO2 laser technique.
Aluminum trichloride hexahedron AlCl3 6H2O and O2 were used as aluminum and oxygen source respectively, and Ar gas was used as a carrier gas for AlCl3.
The films were deposited at different Si- substrate temperatures, and different O2 gas flow rates.
The effect of thermal annealing on the low substrate temperature deposited film was carried out in argon environment.
It was found that the films /substrates interfaces not free from (Alx Siy Oz).
The chemically compositions of the deposited films were analyses by using Fourier transformation infrared spectroscopy (FTIR) and Energy Dispersive X-ray spectroscopy (EDX).
FTIR analysis spectrum showed characteristic bands of aluminum silicate corresponding to bending and stretching bonds of aluminum oxide in the range (650-750) cm-1,(750-850)cm-1 respectively, (1150-1105) cm-1 for silicon oxide bonds and (900-1000cm-1) for Si-O-Al bonds.
EDX has been performed in a scanning electron microscopy to characterize the composition in the central part of deposited region and revealed the presence of Al in the film.
The electrical properties of MOS structure were studied, by using C-V and J-V characteristics.
The C-V curves indicate a negative charge and interface trap density between film and substrate to be in the region (1012 -1013 eV-1cm-2).
The J-V curves show the leakage current and suggest Poole-Frenkle and Shcottcky emission mechanisms for carrier transport through the device.
Main Subjects
Topics
No. of Pages
70
Table of Contents
Table of contents.
Abstract.
Chapter One : theoretical background.
Chapter Two : experimental techniques and preparation method.
Chapter Three : results and discussion.
Chapter Four : conclusions and suggestions.
References.
American Psychological Association (APA)
Said, Iman Abd al-Majid. (2012). Evidence of AIxSiyOz formation during preparation of aluminum oxide film on the silicon substrate using glass assisted CO2 laser method. (Master's theses Theses and Dissertations Master). Salahaddin University-Hawler, Iraq
https://search.emarefa.net/detail/BIM-314401
Modern Language Association (MLA)
Said, Iman Abd al-Majid. Evidence of AIxSiyOz formation during preparation of aluminum oxide film on the silicon substrate using glass assisted CO2 laser method. (Master's theses Theses and Dissertations Master). Salahaddin University-Hawler. (2012).
https://search.emarefa.net/detail/BIM-314401
American Medical Association (AMA)
Said, Iman Abd al-Majid. (2012). Evidence of AIxSiyOz formation during preparation of aluminum oxide film on the silicon substrate using glass assisted CO2 laser method. (Master's theses Theses and Dissertations Master). Salahaddin University-Hawler, Iraq
https://search.emarefa.net/detail/BIM-314401
Language
English
Data Type
Arab Theses
Record ID
BIM-314401
