Comparison I-V characteristics of Sbc-Si and Alc-Si junction

الملخص EN

Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25μm), with rate of deposition equals to 2.77 Å / sec, all samples are annealed in a vacuum for one hour at 473K.

The tests have shown that all the films have polycrystalline structure for all Sb films.

The barrier heights in (Sb / c-Si) junction were found to be equal 0.825eV, but (Al / c-Si) junction ohmic contact.

Current-voltage measurements confirm this behavior.