Comparison I-V characteristics of Sbc-Si and Alc-Si junction
Other Title(s)
مقارنة خصائص تيار-جهد لمفرق Alc-Si و Sbc-Si
Joint Authors
al-Ansari, Ramiz Ahmad Muhammad
al-Lami, Husayn Khazal Rashid
Hajim, Fatin Kasid
Source
Ibn al-Haitham Journal for Pure and Applied Science
Issue
Vol. 26, Issue 1 (30 Apr. 2013), pp.153-158, 6 p.
Publisher
University of Baghdad College of Education for Pure Science / Ibn al-Haitham
Publication Date
2013-04-30
Country of Publication
Iraq
No. of Pages
6
Main Subjects
Topics
Abstract AR
تم تحضير مفرق هجين من ترسيب أغشية الانتيمون و الألمنيوم على رقائق من السيلكون أحادي البلورة n-type بطريقة الترسيب بالفراغ بسمك (0.25 μm) و بمعدل ترسيب 2.77 Å/sec, ثم لدنت العينات بدرجة حرارة 473 K مدة ساعة واحدة.
أظهرت الفحوصات إن جميع أغشية الانتيمون ذو تركيب متعددة التبلور, و وجد ارتفاع حاجز الجهد في مفرق 825 eV Sb/c-Si.
لمفرق Al/c-Si لوحظ أن قياس خواص I-V كانت أومية و فسر ذلك لعدم وجود حاجز جهد من Si, Al.
Abstract EN
Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25μm), with rate of deposition equals to 2.77 Å / sec, all samples are annealed in a vacuum for one hour at 473K.
The tests have shown that all the films have polycrystalline structure for all Sb films.
The barrier heights in (Sb / c-Si) junction were found to be equal 0.825eV, but (Al / c-Si) junction ohmic contact.
Current-voltage measurements confirm this behavior.
American Psychological Association (APA)
Hajim, Fatin Kasid& al-Ansari, Ramiz Ahmad Muhammad& al-Lami, Husayn Khazal Rashid. 2013. Comparison I-V characteristics of Sbc-Si and Alc-Si junction. Ibn al-Haitham Journal for Pure and Applied Science،Vol. 26, no. 1, pp.153-158.
https://search.emarefa.net/detail/BIM-337096
Modern Language Association (MLA)
Hajim, Fatin Kasid…[et al.]. Comparison I-V characteristics of Sbc-Si and Alc-Si junction. Ibn al-Haitham Journal for Pure and Applied Science Vol. 26, no. 1 (Apr. 2013), pp.153-158.
https://search.emarefa.net/detail/BIM-337096
American Medical Association (AMA)
Hajim, Fatin Kasid& al-Ansari, Ramiz Ahmad Muhammad& al-Lami, Husayn Khazal Rashid. Comparison I-V characteristics of Sbc-Si and Alc-Si junction. Ibn al-Haitham Journal for Pure and Applied Science. 2013. Vol. 26, no. 1, pp.153-158.
https://search.emarefa.net/detail/BIM-337096
Data Type
Journal Articles
Language
English
Notes
Includes appendix : p. 156-157
Record ID
BIM-337096
