Study the effect of annealing temperature on the structure of a-Se and electrical properties of a-Se c-Si heterojunction

الملخص EN

In this work study effect of annealing temperature on the Structure of a-Se and electrical properties of a-Se / c-Si hetrojunction have been studied.

The hetrojunction fabricated by deposition of a-Se film on c-Si using thermal evaporation.

Electrical properties of a-Se / c-Si heterojunction include I-V characteristics, in dark at different annealing temperature and C-V characteristics are considered in the present work.

C-V characteristics suggested that the fabricated diode was abrupt type, built in potential determined by extrapolation from 1 / C2-V curve.

The built-in potential (Vbi) for the Se / Si System was found to be increase from 1.21 to 1.62eV with increasing of annealing temperature.