Study the effect of annealing temperature on the structure of a-Se and electrical properties of a-Se c-Si heterojunction
Other Title(s)
دراسة تأثير التلدين على الخواص التركيبية للسيلنيوم العشوائي و الكهربائي للمفرق الهجيني a-Se c-Si
Joint Authors
al-Lami, Husayn Khazal Rashid
Sabbar, Ihsan Hamyan
Adim, Kazim Abd al-Wahid
Source
Issue
Vol. 7, Issue 8 (30 Apr. 2009), pp.39-42, 4 p.
Publisher
University of Baghdad College of Science
Publication Date
2009-04-30
Country of Publication
Iraq
No. of Pages
4
Main Subjects
Topics
Abstract AR
في هذا البحث تم دراسة تأثير التلدين على الخواص التركيبية للسيلنيوم و الخواص الكهربائية للمفرق ألهجيني a-Se / c-Si الناتج من ترسيب السلنيوم بطريقة التبخير الحراري على السليكون.
الخواص الكهربائية للمفرق الهجيني تتضمن خصائص التيار-فولتية في حالة الظلام و بدرجات تلدين مختلفة و خصائص سعة-فولتية.
من خصائص سعة-فولتية تبين أن المفرق الهجيني هو من النوع الحاد و أن جهد البناء تم حسابه من منحنى الفولتية و مقلوب مربع السعة و تبين أن جهد البناء للمفرق الهجيني يزداد من 1.21 إلى 1.62 إلكترون فولت بزيادة التلدين.
Abstract EN
In this work study effect of annealing temperature on the Structure of a-Se and electrical properties of a-Se / c-Si hetrojunction have been studied.
The hetrojunction fabricated by deposition of a-Se film on c-Si using thermal evaporation.
Electrical properties of a-Se / c-Si heterojunction include I-V characteristics, in dark at different annealing temperature and C-V characteristics are considered in the present work.
C-V characteristics suggested that the fabricated diode was abrupt type, built in potential determined by extrapolation from 1 / C2-V curve.
The built-in potential (Vbi) for the Se / Si System was found to be increase from 1.21 to 1.62eV with increasing of annealing temperature.
American Psychological Association (APA)
al-Lami, Husayn Khazal Rashid& Sabbar, Ihsan Hamyan& Adim, Kazim Abd al-Wahid. 2009. Study the effect of annealing temperature on the structure of a-Se and electrical properties of a-Se c-Si heterojunction. Iraqi Journal of Physics،Vol. 7, no. 8, pp.39-42.
https://search.emarefa.net/detail/BIM-338200
Modern Language Association (MLA)
al-Lami, Husayn Khazal Rashid…[et al.]. Study the effect of annealing temperature on the structure of a-Se and electrical properties of a-Se c-Si heterojunction. Iraqi Journal of Physics Vol. 7, no. 8 (2009), pp.39-42.
https://search.emarefa.net/detail/BIM-338200
American Medical Association (AMA)
al-Lami, Husayn Khazal Rashid& Sabbar, Ihsan Hamyan& Adim, Kazim Abd al-Wahid. Study the effect of annealing temperature on the structure of a-Se and electrical properties of a-Se c-Si heterojunction. Iraqi Journal of Physics. 2009. Vol. 7, no. 8, pp.39-42.
https://search.emarefa.net/detail/BIM-338200
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 42
Record ID
BIM-338200
