Construction of anisotype CdS Si heterojunction and lineup using I-V and C-V measurements

الملخص EN

Near-ideal p-CdS/n-Si heterojunction band edge lineup has been investigated for the first time with aid of I-V and C-V measurements.

The heterojunction was manufactured by deposition of CdS films prepared by chemical spray pyrolysis technique (CSP) on monocrystalline n-type silicon.

The experimental data of the conduction band offset Ec and valence band offset Ec were compared with theoretical values.

The band offset Ec=530meV and Ev=770meV obtained at 300K.

The energy band diagram of p-CdS/n-Si HJ was constructed.

C-V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C-2-V plot.