Spin polarized transport in semiconductor

المؤلفون المشاركون

Boudine, A.
Benhizia, K.
Kalla, L.

المصدر

Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.

الناشر

جامعة العربي بن مهيدي بأم البواقي

تاريخ النشر

2011-12-31

دولة النشر

الجزائر

عدد الصفحات

3

التخصصات الرئيسية

الهندسة الكهربائية

الموضوعات

• أشباه الموصلات
• الإلكترونيات

الملخص الإنجليزي

In this paper, we study two-dimensional spin polarized transport in semiconductors.

Based on the some semiclassical considerations and taking account of the spin relaxation.

We determined the relationship of the polarization as a function of time and the distance.

And we have also established the relationship of the drain current in a 2D channel of a transistor called "spin-FET" where it was matter to highlight this type of transport.

This study was crowned with a numerical study of the characteristics of spinFET 2D transistor depending on the external field and internal characteristics of the semiconductor.

نوع البيانات

أوراق مؤتمرات

رقم السجل

BIM-367283

• APA
• MLA
• AMA