Spin polarized transport in semiconductor
Joint Authors
Boudine, A.
Benhizia, K.
Kalla, L.
Source
Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2011-12-31
Country of Publication
Algeria
No. of Pages
3
Main Subjects
Topics
English Abstract
In this paper, we study two-dimensional spin polarized transport in semiconductors.
Based on the some semiclassical considerations and taking account of the spin relaxation.
We determined the relationship of the polarization as a function of time and the distance.
And we have also established the relationship of the drain current in a 2D channel of a transistor called "spin-FET" where it was matter to highlight this type of transport.
This study was crowned with a numerical study of the characteristics of spinFET 2D transistor depending on the external field and internal characteristics of the semiconductor.
Data Type
Conference Papers
Record ID
BIM-367283
American Psychological Association (APA)
Boudine, A.& Benhizia, K.& Kalla, L.. 2011-12-31. Spin polarized transport in semiconductor. International Conference on New Materials and Active Devices (1st : 2011 : Umm al-Bawaqi, Algeria). . Vol. 1, no. 00 (Dec. 2011), pp.63-65.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-367283
Modern Language Association (MLA)
Boudine, A.…[et al.]. Spin polarized transport in semiconductor. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2011-12-31.
https://search.emarefa.net/detail/BIM-367283
American Medical Association (AMA)
Boudine, A.& Benhizia, K.& Kalla, L.. Spin polarized transport in semiconductor. . International Conference on New Materials and Active Devices (1st : 2011 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-367283
