SIMS analysis study of the all Nb SIS junction

الملخص EN

This work presents an experimental investigation of SIS junctions when a thin insulator layer (AlOx) is introduced between the two superconductor electrodes.

The SIMS analysis technique showed the diffusivity effect of the AlOx as barrier onto the top electrode.

The experimental results determine the effect of the AlOx on the device performances.

A general explanation and discussion of this effect has been presented