Photo-electrical properties of silicon germanium thin films

الملخص EN

Four samples of silicon germanium thin films deposited on glass substrates of various percentages of germanium were fabricated.

It was found that the increase in germanium percentage from 0 to 25% leads to a reduction of optical energy gap from 1.55 eV to 1.35 eV.

The silicon germanium thin films then deposited on silicon wafers and the photo-electrical properties of the junctions were studied.

The behavior of 25% germanium sample gave, somewhat, better detection parameters (detectivity of 2000 W'1) with low values of leakage current.

While the 10% germanium sample gave low values of quantum efficiency because of the high value of leakage current.