Photo-electrical properties of silicon germanium thin films
Joint Authors
Muhammad, Wagah F.
Jirjis, M. K.
Source
Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series
Issue
Vol. 15, Issue 4 (31 Dec. 2000), pp.143-154, 12 p.
Publisher
Mutah University Deanship of Academic Research
Publication Date
2000-12-31
Country of Publication
Jordan
No. of Pages
12
Main Subjects
Abstract EN
Four samples of silicon germanium thin films deposited on glass substrates of various percentages of germanium were fabricated.
It was found that the increase in germanium percentage from 0 to 25% leads to a reduction of optical energy gap from 1.55 eV to 1.35 eV.
The silicon germanium thin films then deposited on silicon wafers and the photo-electrical properties of the junctions were studied.
The behavior of 25% germanium sample gave, somewhat, better detection parameters (detectivity of 2000 W'1) with low values of leakage current.
While the 10% germanium sample gave low values of quantum efficiency because of the high value of leakage current.
American Psychological Association (APA)
Muhammad, Wagah F.& Jirjis, M. K.. 2000. Photo-electrical properties of silicon germanium thin films. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series،Vol. 15, no. 4, pp.143-154.
https://search.emarefa.net/detail/BIM-377580
Modern Language Association (MLA)
Muhammad, Wagah F.& Jirjis, M. K.. Photo-electrical properties of silicon germanium thin films. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series Vol. 15, no. 4 (2000), pp.143-154.
https://search.emarefa.net/detail/BIM-377580
American Medical Association (AMA)
Muhammad, Wagah F.& Jirjis, M. K.. Photo-electrical properties of silicon germanium thin films. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series. 2000. Vol. 15, no. 4, pp.143-154.
https://search.emarefa.net/detail/BIM-377580
Data Type
Journal Articles
Language
English
Notes
Includes appendices : p. 150-154
Record ID
BIM-377580
