Effect of different etching parameters on resistivity of silicon nano-material

الملخص EN

Silicon nano-material have been prepared in this work via electrochemical (EC) and photoelectrochemical (PEC) etching processes of n and p-type silicon wafers in hydrofluoric (HF) acid of 24.

5 % concentration.

All conditions preparation such as substrate resistivity, etching time, current density and illumination have been changed to study the effect of these parameters on resistivity of these porous silicon layers.