I-V characteristics of III-V compounds (GAAS)‎ for MOSFET devices

الملخص EN

A new approach of examining and characterizing both thin film or thin film based devices are described in this paper.

Justification of the selected techniques which have been utilized in fabricating these thin films are given.

The important aspect of selecting the substrates on which the thin films are made were pointed out.

The measurement techniques which have been adopted here are discussed.

Results and discussion show the ability, reliability and simplicity of these proposed techniques.

The results are interesting and confirm the method used to produce them, even though it is an oil pumped system.