I-V characteristics of III-V compounds (GAAS) for MOSFET devices
Other Title(s)
علاقة التيار بالجهد للمركبات (III-V) لمادة الجاليوم أرسنيد المستخدم لوصلات ال - MOSFET
Joint Authors
al-Amir, Said Sad
al-Marzuqi, Fahd Masud
Source
Journal of King Abdulaziz University : Sciences
Issue
Vol. 10, Issue 1 (31 Dec. 1998), pp.77-87, 11 p.
Publisher
King Abdulaziz University Scientific Publishing Center
Publication Date
1998-12-31
Country of Publication
Saudi Arabia
No. of Pages
11
Main Subjects
Topics
Abstract AR
في هذا البحث تم إتباع طريقة بحثية مبسطة لفحص و نمذجة الأغشية الرقيقة المنتجة بواسطة أجهزة التفريغ و قد تم اختبار تقنية مبسطة جدا لفحص هذه الأغشية و التي عملت على شكل أغشية رقيقة فقط و أغشية على شكل دوائر إليكترونية.
و هذه التقنية عبارة عن استخدام جهاز بيكوأميتر (4140 HP) و ملحقاته و كانت النتائج في غاية الأهمية من ناحية التطبيقا الإليكترونية سواء في مجال الكبرا أو مجال الدوائر المتكاملة.
Abstract EN
A new approach of examining and characterizing both thin film or thin film based devices are described in this paper.
Justification of the selected techniques which have been utilized in fabricating these thin films are given.
The important aspect of selecting the substrates on which the thin films are made were pointed out.
The measurement techniques which have been adopted here are discussed.
Results and discussion show the ability, reliability and simplicity of these proposed techniques.
The results are interesting and confirm the method used to produce them, even though it is an oil pumped system.
American Psychological Association (APA)
al-Amir, Said Sad& al-Marzuqi, Fahd Masud. 1998. I-V characteristics of III-V compounds (GAAS) for MOSFET devices. Journal of King Abdulaziz University : Sciences،Vol. 10, no. 1, pp.77-87.
https://search.emarefa.net/detail/BIM-389156
Modern Language Association (MLA)
al-Amir, Said Sad& al-Marzuqi, Fahd Masud. I-V characteristics of III-V compounds (GAAS) for MOSFET devices. Journal of King Abdulaziz University : Sciences Vol. 10, no. 1 (Dec. 1998), pp.77-87.
https://search.emarefa.net/detail/BIM-389156
American Medical Association (AMA)
al-Amir, Said Sad& al-Marzuqi, Fahd Masud. I-V characteristics of III-V compounds (GAAS) for MOSFET devices. Journal of King Abdulaziz University : Sciences. 1998. Vol. 10, no. 1, pp.77-87.
https://search.emarefa.net/detail/BIM-389156
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 86
Record ID
BIM-389156
