Transient temperature variations and thermal rise-time measurement for a semiconductor laser amplifier

الملخص EN

A new approximate method for the evaluation ofthe transient temperature response and the measurement of thermal rise time for a semiconductor laser amplifier is presented.

This technique employs the shift in the peak emission wavelength with the change in operating temperature of a device.

This method can also be used for semiconductor laser diodes.

The validity of this technique is shown by comparing the results with other well established experimental techniques.

Keywords: Semiconductor laser diode.

Semiconductor laser amplifier, Thermal rise time, Transient temperature variations.