Transient temperature variations and thermal rise-time measurement for a semiconductor laser amplifier
Source
The Arabian Journal for Science and Engineering. Section A, Science
Issue
Vol. 22, Issue 1A (31 Jan. 1997), pp.75-85, 11 p.
Publisher
King Fahd University of Petroleum and Minerals
Publication Date
1997-01-31
Country of Publication
Saudi Arabia
No. of Pages
11
Main Subjects
Abstract EN
A new approximate method for the evaluation ofthe transient temperature response and the measurement of thermal rise time for a semiconductor laser amplifier is presented.
This technique employs the shift in the peak emission wavelength with the change in operating temperature of a device.
This method can also be used for semiconductor laser diodes.
The validity of this technique is shown by comparing the results with other well established experimental techniques.
Keywords: Semiconductor laser diode.
Semiconductor laser amplifier, Thermal rise time, Transient temperature variations.
American Psychological Association (APA)
Karim, Abd. 1997. Transient temperature variations and thermal rise-time measurement for a semiconductor laser amplifier. The Arabian Journal for Science and Engineering. Section A, Science،Vol. 22, no. 1A, pp.75-85.
https://search.emarefa.net/detail/BIM-390073
Modern Language Association (MLA)
Karim, Abd. Transient temperature variations and thermal rise-time measurement for a semiconductor laser amplifier. The Arabian Journal for Science and Engineering. Section A, Science Vol. 22, no. 1A (Jan. 1997), pp.75-85.
https://search.emarefa.net/detail/BIM-390073
American Medical Association (AMA)
Karim, Abd. Transient temperature variations and thermal rise-time measurement for a semiconductor laser amplifier. The Arabian Journal for Science and Engineering. Section A, Science. 1997. Vol. 22, no. 1A, pp.75-85.
https://search.emarefa.net/detail/BIM-390073
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 85
Record ID
BIM-390073
