Admittance measurements on cuinse2 thin films prepared by coevaporation for solar cells

الملخص EN

-In this paper, deep levels in CuInSe2are investigated with admittance spectroscopy (A.S) on CdS/CuInSe> (CIS) solar cells.

The samples were fabricated using a coevaporated CuInSe, thin film and a chemical deposition of a highly doped n-CdS layers, in order to obtain an abrupt junction with a dominate depletion in CIS region.

Capacitance versus voltage data were performed to determine the density of ionised impurities.

The admittance measurements were carried between 80 and 260K with a frequency range from 1 to 80 Khz.

Arrhenius plot of (In eJT) versus temperature (1000/T) yield for the determination of traps of majority carriers of about 210 me V above the valence band.