Admittance measurements on cuinse2 thin films prepared by coevaporation for solar cells
Joint Authors
Bin Salim, N.
Bin Abd Salim, M.
Bechiri, L.
Merdes, S.
Mahdjoubi, L.
Lincot, D.
Source
Issue
Vol. 2001, Issue 10 (30 Jun. 2001), pp.182-185, 4 p.
Publisher
Annaba Badji Mokhtar University
Publication Date
2001-06-30
Country of Publication
Algeria
No. of Pages
4
Main Subjects
Topics
Abstract EN
-In this paper, deep levels in CuInSe2are investigated with admittance spectroscopy (A.S) on CdS/CuInSe> (CIS) solar cells.
The samples were fabricated using a coevaporated CuInSe, thin film and a chemical deposition of a highly doped n-CdS layers, in order to obtain an abrupt junction with a dominate depletion in CIS region.
Capacitance versus voltage data were performed to determine the density of ionised impurities.
The admittance measurements were carried between 80 and 260K with a frequency range from 1 to 80 Khz.
Arrhenius plot of (In eJT) versus temperature (1000/T) yield for the determination of traps of majority carriers of about 210 me V above the valence band.
American Psychological Association (APA)
Bin Salim, N.& Bin Abd Salim, M.& Bechiri, L.& Merdes, S.& Mahdjoubi, L.& Lincot, D.. 2001. Admittance measurements on cuinse2 thin films prepared by coevaporation for solar cells. Synthèse،Vol. 2001, no. 10, pp.182-185.
https://search.emarefa.net/detail/BIM-390118
Modern Language Association (MLA)
Bin Salim, N.…[et al.]. Admittance measurements on cuinse2 thin films prepared by coevaporation for solar cells. Synthèse No. 10 (Jun. 2001), pp.182-185.
https://search.emarefa.net/detail/BIM-390118
American Medical Association (AMA)
Bin Salim, N.& Bin Abd Salim, M.& Bechiri, L.& Merdes, S.& Mahdjoubi, L.& Lincot, D.. Admittance measurements on cuinse2 thin films prepared by coevaporation for solar cells. Synthèse. 2001. Vol. 2001, no. 10, pp.182-185.
https://search.emarefa.net/detail/BIM-390118
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 185
Record ID
BIM-390118
