Simulation of the ebic current by the Monte-Carlo method

الملخص EN

-Our work has for objective to simulate the EBIC current (Electron Beam Induced Current) by using the Monte-Carlo method that allows simulating paths of an incident beam electron in semiconductors.

By the EBIC technique, we calculate lengths of porter distribution minority created in the semiconductor volume during of collisions between incidents electrons and atoms of the target and as a result the determination of variations of the collection efficiency in function of parameters characterising the target and the incident beam.

To validate our calculation model will concentrate it on a solar cell (CdS(n +)/ZnSiAs2(p)) and to see how varies the output in this type of junction.

Keys words : EBIC, Monte-Carlo, Structures