Characterization of in-doped CdTe thin film

الملخص EN

Doping of CDTE thin films with donor impurity (Indium) at various degrees of compensation was carried out.

The I-V characteristics of CDTE thin films indicate that unannealed and undoped samples contained both donor and acceptor-centers.

An optimized annealing temperature of 80ο was determined at low operating temperatures.

Such degree of annealing temperature supports the donor action in the formation of (In-Cd vacancies) complexes.

At high temperatures of operation, the activation energy increases.

This indicates that compensating acceptor defects are produced.