Characterization of in-doped CdTe thin film
Joint Authors
Husayn, Ahmad A.
Ali, Luqman S.
Source
Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series
Issue
Vol. 11, Issue 5 (30 Nov. 1996), pp.207-218, 12 p.
Publisher
Mutah University Deanship of Academic Research
Publication Date
1996-11-30
Country of Publication
Jordan
No. of Pages
12
Main Subjects
Abstract EN
Doping of CDTE thin films with donor impurity (Indium) at various degrees of compensation was carried out.
The I-V characteristics of CDTE thin films indicate that unannealed and undoped samples contained both donor and acceptor-centers.
An optimized annealing temperature of 80ο was determined at low operating temperatures.
Such degree of annealing temperature supports the donor action in the formation of (In-Cd vacancies) complexes.
At high temperatures of operation, the activation energy increases.
This indicates that compensating acceptor defects are produced.
American Psychological Association (APA)
Husayn, Ahmad A.& Ali, Luqman S.. 1996. Characterization of in-doped CdTe thin film. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series،Vol. 11, no. 5, pp.207-218.
https://search.emarefa.net/detail/BIM-396441
Modern Language Association (MLA)
Husayn, Ahmad A.& Ali, Luqman S.. Characterization of in-doped CdTe thin film. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series Vol. 11, no. 5 (Nov. 1996), pp.207-218.
https://search.emarefa.net/detail/BIM-396441
American Medical Association (AMA)
Husayn, Ahmad A.& Ali, Luqman S.. Characterization of in-doped CdTe thin film. Mu'tah Journal for Research and Studies : Natural and Applied Sciences Series. 1996. Vol. 11, no. 5, pp.207-218.
https://search.emarefa.net/detail/BIM-396441
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 218
Record ID
BIM-396441
