The effect of chemical polishing on polysilicon surface

الملخص EN

Chemical polishing of polysilicon (Poly Si) has been investigated using scanning electron microscopy (SEM), reflectance spectrophotometry and dark electrical I-V measurements.

It was observed that chemical polishing affects surface roughness and shows deeper etching at grain boundaries.

It was also found that etching by solution A for 15 minutes produces a low reflectivity surface and better quality Al-poly Si (P-type) Schottky diodes.